† Corresponding author. E-mail:
Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921403 and 2016YFA0300701) and the National Natural Sciences Foundation of China (Grant Nos. 51427801, 11374350, 11274360, and 11274361).
Although the spin-reorientation transition from out-of-plane to in-plane in Fe/Si film is widely reported, the tuning of in-plane spin orientation is not yet well developed. Here, we report the thickness-, temperature- and Cu-adsorption- induced in-plane spin-reorientation transition processes in Fe/Si (557) film, which can be attributed to the coexistence of two competing step-induced uniaxial magnetic anisotropies, i.e., surface magnetic anisotropy with magnetization easy axis perpendicular to the step and volume magnetic anisotropy with magnetization easy axis parallel to the step. For Fe film thickness smaller than 32 monolayer (ML), the magnitudes of two effects under various temperatures are extracted from the thickness dependence of uniaxial magnetic anisotropy. For Fe film thickness larger than 32 ML, the deviation of experimental results from fitting results is understood by the strain-relief-induced reduction of volume magnetic anisotropy. Additionally, the surface and volume magnetic anisotropies are both greatly reduced after covering Cu capping layer on Fe/Si (557) film while no significant influence of NaCl capping layer on step-induced magnetic anisotropies is observed. The experimental results reported here provide various practical methods for manipulating in-plane spin orientation of Fe/Si films and improve the understanding of step-induced magnetic anisotropies.
Tailoring the spin orientation of ferromagnetic films was an intensively studied field due to its significant role in developing spintronic device.[1,2] Since the spin orientation in ferromagnetic film is directly determined by the magnetic anisotropy, a better controlling and understanding of magnetic anisotropy becomes one of the challenging topics to engineer the spin order orientation of magnetic material.[1–3] Surface/interface effect has a strong bearing on the magnetic properties of low-dimensional system, and consequently can be taken as an effective method to engineer the magnetic anisotropy of ultrathin film.[4–7] Epitaxial growth of the ferromagnetic film on stepped substrate is one of the most common methods to form a periodical surface morphology of film, resulting in an in-plane uniaxial magnetic anisotropy (UMA) originating from the magnetic shape anisotropy,[8–10] bulk strain,[11,12] and/or Néel pair-bonding of surface atomic.[13] Due to the complex effects induced by stepped substrate, competing magnetic anisotropies are usually employed to modify the spin orientation of ferromagnetic film. For example, in the case of Ag/Fe film deposited on vicinal Ag substrate, the step-induced magnetic anisotropies are the superposition of competing surface and volume magnetic anisotropies.[14,15] Therefore, the spin orientation can be tuned by changing the respective contribution of surface and volume magnetic anisotropy to UMA.[14]
Due to the importance of Fe/Si films in magnetoelectronics and the integration of magnetic devices in silicon technology,[16] the magnetic anisotropy of Fe/Si film has been largely reported.[3,7–10,17–20] In particular, the manipulation of spin-reorientation transition (SRT) processes from out-of-plane to in-plane in Fe/Si film has already been fully understood and studied. For example, for Fe films deposited on flat Si (111) substrate, due to the competition between surface magnetic anisotropy and shape anisotropy, an SRT process from out-of-plane to in-plane with a critical thickness of about 7 monolayer (ML) was observed.[19] Differently, for Fe film grown on vicinal Si (111) substrate, a continuous SRT process in a larger thickness range of 4.5 ML–7.5 ML was obtained.[9] Covering the 4.7-ML Fe film with 80-ML Cu film can also introduce an SRT from out-of-plane to in-plane.[17] However, among the investigations about the magnetic anisotropy of Fe/Si films, tuning of in-plane spin orientation is still not yet developed. Since larger step density may result in larger surface effect, Si (557) with huge step density, i.e., Si (111) 9.45° vicinal substrate,[21] was thus used as the substrate for expecting the emergence of step-induced competing magnetic anisotropies. Here, we successfully obtain the competing step-induced UMA in epitaxial Fe/Si (557) film. By modifying the respective contribution of surface and volume magnetic anisotropy to UMA, the in-plane spin orientation in Fe/Si (557) film can be strongly tuned by changing the thickness of Fe film, temperature and Cu capping layer. Our work provides various methods of tuning the spin orientation in Fe/Si (557) film and conduces to the understanding of step-induced magnetic anisotropies.
The Fe/Si (557) films were prepared in an ultrahigh vacuum molecule beam epitaxial combine system with a base pressure lower than 2 × 10−10 mbar (1 bar = 105 Pa). The commercial Si (557) substrate was firstly heated at 700 K for over 8 h, and then quickly flashed to 1200 K and quickly cooled down to 400 K, which was repeated over 10 times to form a well defined surface reconstruction, which is confirmed by in-situ low energy electron diffraction (LEED) shown in the inset of Fig.
Figures
![]() | Fig. 1. STM images for Si (557) substrate (a), FeSi2 buffer layer (b), 20-ML Fe film (c), and 25-ML Cu film (d). Each inset shows the corresponding LEED pattern. |
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Deviation of experimental data from the fitting line is observed for dFe > 32 ML (see Fig.
Since the step-induced UMA in ferromagnetic layers can be strongly modified by tailoring strain,[17] surface magnetic anisotropy[11,14] or quantum well states[27] when covering the ferromagnetic film with non-magnetic film. Besides, understanding the effects of different capping layers on magnetic anisotropy is also significant for designing device for spintronic application.[28] Therefore, to better understand the step-induced UMA, NaCl and Cu films are deposited as the capping layer to explore their influence on magnetic anisotropy of Fe/Si (557) film.
Figures
In summary, the effects of thickness of Fe film, temperature and capping layer on the step-induced UMA of Fe/Si (557) films are systematically investigated. Step-induced competing surface and volume magnetic anisotropies, originating from the Néel pair-bonding of surface atomic and volume strain respectively, are extracted from thickness dependence of UMA field. Therefore, the in-plane spin orientation of Fe/Si (557) film is tunable by modifying the individual contributions of these two competing magnetic anisotropies to the UMA by thickness, temperature and capping layer. Our experimental results provide valuable information for manipulating the in-plane spin orientation and understanding the step-induced UMA in Fe/Si film.
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