1. IntroductionTailoring the spin orientation of ferromagnetic films was an intensively studied field due to its significant role in developing spintronic device.[1,2] Since the spin orientation in ferromagnetic film is directly determined by the magnetic anisotropy, a better controlling and understanding of magnetic anisotropy becomes one of the challenging topics to engineer the spin order orientation of magnetic material.[1–3] Surface/interface effect has a strong bearing on the magnetic properties of low-dimensional system, and consequently can be taken as an effective method to engineer the magnetic anisotropy of ultrathin film.[4–7] Epitaxial growth of the ferromagnetic film on stepped substrate is one of the most common methods to form a periodical surface morphology of film, resulting in an in-plane uniaxial magnetic anisotropy (UMA) originating from the magnetic shape anisotropy,[8–10] bulk strain,[11,12] and/or Néel pair-bonding of surface atomic.[13] Due to the complex effects induced by stepped substrate, competing magnetic anisotropies are usually employed to modify the spin orientation of ferromagnetic film. For example, in the case of Ag/Fe film deposited on vicinal Ag substrate, the step-induced magnetic anisotropies are the superposition of competing surface and volume magnetic anisotropies.[14,15] Therefore, the spin orientation can be tuned by changing the respective contribution of surface and volume magnetic anisotropy to UMA.[14]
Due to the importance of Fe/Si films in magnetoelectronics and the integration of magnetic devices in silicon technology,[16] the magnetic anisotropy of Fe/Si film has been largely reported.[3,7–10,17–20] In particular, the manipulation of spin-reorientation transition (SRT) processes from out-of-plane to in-plane in Fe/Si film has already been fully understood and studied. For example, for Fe films deposited on flat Si (111) substrate, due to the competition between surface magnetic anisotropy and shape anisotropy, an SRT process from out-of-plane to in-plane with a critical thickness of about 7 monolayer (ML) was observed.[19] Differently, for Fe film grown on vicinal Si (111) substrate, a continuous SRT process in a larger thickness range of 4.5 ML–7.5 ML was obtained.[9] Covering the 4.7-ML Fe film with 80-ML Cu film can also introduce an SRT from out-of-plane to in-plane.[17] However, among the investigations about the magnetic anisotropy of Fe/Si films, tuning of in-plane spin orientation is still not yet developed. Since larger step density may result in larger surface effect, Si (557) with huge step density, i.e., Si (111) 9.45° vicinal substrate,[21] was thus used as the substrate for expecting the emergence of step-induced competing magnetic anisotropies. Here, we successfully obtain the competing step-induced UMA in epitaxial Fe/Si (557) film. By modifying the respective contribution of surface and volume magnetic anisotropy to UMA, the in-plane spin orientation in Fe/Si (557) film can be strongly tuned by changing the thickness of Fe film, temperature and Cu capping layer. Our work provides various methods of tuning the spin orientation in Fe/Si (557) film and conduces to the understanding of step-induced magnetic anisotropies.
3. Results and discussionFigures 1(a)–1(d) display the STM images which show the surface morphologies of pure Si (557) substrate, FeSi2 buffer layer, 20-ML Fe film and 25-ML Cu film, respectively. Si (557) substrate has a very narrow terrace with a mean width of ∼ 5 nm as shown in Fig. 1(a). Figures 1(c) and 1(d) show the island-like surface morphologies, indicating the Volmer–Weber epitaxial mode for Fe and Cu film. The insets in these figures show the corresponding LEED patterns. The crystal structure of epitaxial growth of bcc α-Fe film exhibits six-fold surface symmetry, which is verified by the LEED pattern (Inset of Fig. 1(c)). Unlike the previous LEED patterns reported in Fe films deposited on Si (111) flat substrate or Si (111) vicinal substrate with small vicinal angle, the elongated shape of the LEED patterns in Fe/Si (557) films can be attributed to the step-induced strong scatter of electrons. However, after growing NaCl capping layer on single crystal Fe film, we observe no distinct LEED pattern (not shown here). The disappearance of LEED pattern indicates that the NaCl capping layer may be amorphous or polycrystalline.
Figure 2 shows the MOKE hysteresis loops parallel and perpendicular to the step in Fe/FeSi2/Si (557) films with different thickness values of Fe film (dFe) at room temperature. The Fe films deposited on FeSi2 buffer layer were prepared step-by-step. The magnetic hysteresis loops are then obtained by in-situ longitudinal MOKE. The asymmetry of magnetization loops shown in Fig. 2 is attributed to the remanence error of magnet, which usually contributes a small shift (about 10 Oe, 1 Oe = 79.5775 A·m−1) of loop.[22] The Kerr hysteresis loops show a split shape with nearly zero remanence for field applied along the step while a square shape for field applied perpendicularly to the step for dFe ≤ 12 ML, indicating an in-plane UMA with magnetization easy axis (EA) perpendicular to the step. The split magnetization loop along hard axis (HA) can be characterized by the shift field (Hs) defined by the offset of the minor loop (see the definition shown in Fig. 2(a)), which is typically taken as a measure for the magnitude of UMA. Traditionally, for a perfect flat Fe (111) film, six-fold magnetocrystalline anisotropy is dominated.[8] However, even a small deviation of film plane from (111) plane can change the six-fold magnetic symmetry into the superposition of a uniaxial and a four-fold contribution.[10] Therefore, although the crystal structure of Fe (557) film is of in-plane six-fold symmetry, the magnetic hysteresis loop of HA reveals a split shape, which is typically obtained in film whose crystal structure is of mainly four-fold symmetry, for example, Fe/CoO/MgO (100) films[23] and Fe/NiO films on Ag (100) vicinal substrate.[24] Interestingly, we observe an in-plane SRT from perpendicular to the step to parallel to the step when further increasing dFe up to 13 ML. To better clarify the effect of Fe film thickness on magnetic anisotropy of Fe/Si (557) film, the thickness dependence of Hs is obtained.
Figure 3(a) shows the thickness dependence of UMA field in a temperature range of 90 K–300 K. In previous work about the magnetic anisotropy of Fe/Si (111) film, magnetic shape anisotropy plays an important role in determining the magnetic anisotropy due to quasi one-dimensional periodically stepped surface morphology. The magnetic shape anisotropy in Fe/Si (557) film can be accurately obtained from the surface morphology of STM data (see STM image in Fig. 1(c)) by the self-correlation function method developed by Bubendorff et al.[25] However, the calculation of magnetic shape anisotsropy yields the UMA field of only about several Oe, which is much smaller than the UMA field (∼ 140 Oe) obtained from experiments for dFe = 20 ML. Therefore, the magnetic shape anisotropy is excluded from further discussion about the origin of magnetic anisotropy. Traditionally, the in-plane UMA is usually divided into two parts, i.e., the surface contribution and volume contribution . Then the UMA field Hs can be expressed as the following relation:
We obtain an excellent fitting quality based on Eq. (
1) for
dFe < 32 ML (see the solid curves shown in Fig.
3(a)) at various temperatures. Figure
3(b) shows the temperature dependences of
and
extracted from fitting results. We define positive value for UMA favoring magnetization axis parallel to the step. It is clearly shown in Fig.
3(b) that
and
have negative and positive signs respectively, indicating they support spin orientation perpendicular to the step and parallel to the step, respectively. For
dFe < 13 ML, surface magnetic anisotropy is dominated and EA is perpendicular to the step at room temperature. However, the surface contribution to the UMA gradually decreases with further increasing thickness of Fe film and SRT happens when two effects are balanced. The critical thickness in Fe/Si (557) film for in-plane SRT is about 12 ML at room temperature, where the UMA is almost zero and four-fold magnetic anisotropy is dominated. As illustrated in Fig.
2, the values of normalized remanence of MOKE hysteresis loops parallel and perpendicular to the step are both almost 1 for
dFe = 12 ML, indicating two EAs of four-fold magnetic anisotropy in Fe/Si (557) film are parallel and perpendicular to the step, respectively. Besides, the 2-jump loop observed along the step is attributed to two successive 90° domain wall reversals,
[26] which is typical for ferromagnetic film deposited on (100) plane of substrate but rarely observed in ferromagnetic film deposited on (111) plane of substrate. The magnetic anisotropy in Fe/Si (557) film can also be modified by the temperature. The surface and volume magnetic anisotropies are both enhanced at low temperature as shown in Fig.
3(b). The critical thickness for the spin-reorientation transition is obtained by setting
Hs to be zero based on the anisotropy constants shown in Fig.
3(b). The critical thickness for the spin-reorientation transition changes from ∼ 12.7 ML at 300 K to ∼ 15.2 ML at 90 K and is illustrated in Fig.
3(d), which predicts an in-plane temperature-induced spin-reorientation transition from parallel to the step to perpendicular to the step in a thickness range of ∼ 12.7 ML–15.2 ML when cooling the films down to 90 K. Obviously, in the case of
dFe = 13.5 ML, the temperature-driven spin-reorientation transition is verified (see inset of Fig.
3(b)).
Deviation of experimental data from the fitting line is observed for dFe > 32 ML (see Fig. 3(a)). One of the most possible origins of the volume magnetic anisotropy is the lattice-mismatch-induced volume strain. According to the epitaxial relationships and lattice parameters between Fe and Si substrate iron silicide with aFe [110] = 2.027 Å and aSi [220] = 1.92 Å), compressive stain is induced in Fe film.[17] The volume strain effect cannot persist at large thickness and a strain relief process happens at a certain critical thickness.[11] Figure 3(c) shows the thickness dependences of volume magnetic anisotropy by setting the surface magnetic anisotropy to be a constant obtained from fitting results. The volume magnetic anisotropy keeps almost constant for dFe < 32 ML but decreases quickly with further increasing thickness of Fe film, indicating that the critical thickness for the strain relief process in Fe/Si (557) films is about 32 ML.
Since the step-induced UMA in ferromagnetic layers can be strongly modified by tailoring strain,[17] surface magnetic anisotropy[11,14] or quantum well states[27] when covering the ferromagnetic film with non-magnetic film. Besides, understanding the effects of different capping layers on magnetic anisotropy is also significant for designing device for spintronic application.[28] Therefore, to better understand the step-induced UMA, NaCl and Cu films are deposited as the capping layer to explore their influence on magnetic anisotropy of Fe/Si (557) film.
Figures 4(a) and 4(b) show the representative effects of NaCl and Cu capping layers on the UMA field of Fe/Si (557) film at room temperature, respectively. The UMA field of Fe/Si (557) film seems to be not affected by the NaCl absorption for dFe = 14 ML and 50 ML. Differently, the magnetic anisotropy of Fe/Si (557) film can be strongly modified by Cu capping layer. Especially, in the case of dFe < 13 ML, the spin orientation of Fe/Si (557) film is very sensitive to the Cu adsorption. For example, for dFe = 11 ML, the magnetization EA switched from perpendicular to the step to parallel to the step after covering only 1-ML Cu capping layer on Fe/Si (557) film as shown in the inset of Fig. 4(b). To better clarify the effects of Cu capping layer on the magnetic anisotropy of Fe/Si (557) film, Cu film thickness (dCu) dependence of UMA field is obtained. In the case of dFe = 20 ML, the Cu film thickness dependence of UMA field can be divided into three parts: Hs increases rapidly for dCu < 3 ML (region I), decreases for 3 ML < dCu < 7 ML (region II), and keeps almost constant for dCu > 7 ML (region III). The increase of UMA in region I can be attributed to the Fe–Cu pair-bonding-induced reduction of surface magnetic anisotropy.[13] Due to the Volmer–Weber epitaxial growth mode for Cu film (see STM image shown in Fig. 1(d)), Fe film is not fully covered by Cu capping layer until dCu increases up to 3 ML. In region II, the surface magnetic anisotropy does not change too much. Therefore the reduction of UMA field can be assigned only to the decrease of volume magnetic anisotropy induced by Cu capping layer. The reduction of volume magnetic anisotropy is believed to be directly related to the strain relief process in Fe film. According to the epitaxial relationships and lattice parameters between bulk Fe and Cu capping layer with Å and Å), tensile strain is induced in Cu film.[17] Therefore, considering the intrinsic compressive stain in Fe film, the epitaxial Cu capping layer conduces to the strain relief process in Fe film, and consequently leads to the reduction of volume magnetic anisotropy. In the case of dFe = 50 ML, the individual contribution of surface magnetic anisotropy to UMA decreases greatly. Therefore, Cu-adsorption-induced strain relief is dominated over the Fe–Cu bond-induced reduction of surface magnetic anisotropy, resulting in only a decreasing trend for UMA field as a function of dCu. Differently, NaCl capping layer shows polycrystalline or amorphous structure, indicating that non-epitaxial NaCl capping layer cannot bond with Fe film, and consequently neither strain relief nor the reduction of surface magnetic anisotropy occurs.